Lithography system, sensor, converter element and method of manufacture

ABSTRACT

Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle beamlets. The sensor comprises a converter element for receiving charged particles and generating photons in response. The converter element comprises a surface for receiving one or more charged particle beamlets, the surface being provided with one or more cells for evaluating one or more individual beamlets. Each cell comprises a predetermined blocking pattern of one or more charged particle blocking structures forming multiple knife edges at transitions between blocking and non-blocking regions along a predetermined beamlet scan trajectory over the converter element surface. The converter element surface is covered with a coating layer substantially permeable for said charged particles and substantially impermeable for ambient light. An electrically conductive layer is located between the coating layer and the blocking structures.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a charged particle lithography system,in particular to a maskless charged particle system, to a sensortherefore, in particular for determining charged particle beamproperties, to a converter element therefore, as well as to a method ofmanufacturing the same.

2. Description of the Related Art

Charged-particle beamlet lithography systems make use of a plurality ofcharged particle beamlets to transfer a pattern onto the surface of atarget. The beamlets may write the pattern by being scanned over thetarget surface while their trajectory may be controllably blocked so asto create a beamlet that can be turned on or off. Blocking may beestablished by electrostatic deflection of beamlets on a blockingsurface. Additionally, or alternatively, the size and shape of thebeamlets may be adapted along the trajectory. Deflection, shaping and/orsize adaptation may be executed by one or more electron opticalcomponents like for example an aperture array, an array of electrostaticdeflectors and/or beamlet blankers. In order to transfer a pattern ontothe target surface, the controllable blocking of beamlets in combinationwith their movement over the target surface is performed in accordancewith modulation information. An example of a multiple charged-particlebeamlet lithography system is described in U.S. Pat. No. 6,958,804,which disclosure is herewith incorporated by reference in its entirety.

Such lithography systems can have very large numbers of beamlets, i.e.in the order of 10,000 or higher, for example 13,000. Future designseven envisage numbers in the order of 1,000,000 beamlets. It is ageneral aim for current electron beam lithography systems to be able topattern a target surface in high-resolution, with some applicationsbeing capable of imaging patterns with a critical dimension of wellbelow 100 nm feature sizes.

For such multiple beamlet, high-resolution lithography systems to becommercially viable it is important that the position of each one of thecharged particle beamlets is precisely known and controlled.Additionally, knowledge and control of spot size and shape and intensityof the beamlets at the target surface are also of importance. Due tovarious circumstances, such as manufacturing tolerances and thermaldrift, such beamlet characteristics may however deviate from theirexpected and desired characteristics, which may render these deviatingbeamlets invalid for accurate patterning.

Such deviations may include, among other things, a deviation inposition, a deviation in spot size as exposed on the target surfaceand/or a deviation in beamlet intensity. Deviating beamlets may severelyaffect the quality of the pattern to be written. It is thereforedesirable to detect these deviations so that corrective measures may betaken.

In conventional lithography systems, the position of each beamlet isdetermined by frequent measurement of the beamlet position. Withknowledge of the beamlet position the beamlet can be shifted to thecorrect position. For accurate writing it is beneficial to determine thebeamlet position within a distance in the order of a few nanometers.

Known beamlet position calibration methods generally comprise at leastthree steps: a measuring step in which the position of the beamlet ismeasured, a calculating step in which the measured position of thebeamlet is compared to the desired expected position of that beamlet,and a compensation step in which the difference between the measuredposition and the desired position is compensated for. Compensation maybe performed either in the software or in the hardware of thelithography system.

In advanced charged particle beamlet lithography systems, besidesposition control, beamlet spot size control may be of equal importance.Desired specifications for spot size measurements include determinationof beamlet spot sizes in the range of 30 nm to 150 nm; accuracy of spotsize measurements with 3 sigma value smaller than 5 nm; and areproducibility of such spot size measurements within a single sensorwith 3 sigma value smaller than 5 nm.

It is desirable to determine characteristics like beamlet positionand/or beamlet spot size during operation of a lithography system toallow for early position and/or spot size calibration to improve thetarget surface patterning accuracy. In order to limit negative effectson throughput, i.e. the number of target surfaces that can be patternedwithin a predetermined period of time, it is desirable that the methodof measuring the characteristics of the charged particle beamlets can becarried out within a limited period of time without sacrificingaccuracy.

A sensor for measuring properties of a large number of charged-particlebeamlets, in particular for charged particle beamlets used in alithography system, is described in US published patent application2007/057204 assigned to the present applicant, the content of which isherewith incorporated by reference in its entirety.

US 2007/057204 describes a sensor and method in which charged-particlebeamlets are converted into light beams, using a converter element suchas a fluorescent screen or a doped YAG material. Subsequently, the lightbeams are detected by an array of light sensitive detectors such asdiodes, CCD or CMOS devices. A relatively fast measurement can beachieved by reading out a large number of light sensitive detectors in asingle operation. Additionally the sensor structure, in particular thearray of light detectors, enables a very small pitch of a multiplicityof beams to be measured without the necessity of unduly large structuralmeasures in the region of the stage part of a lithography system.

However, in view of the continuously increasing demands of the industryregarding small dimensions without loss of throughput, there remains aneed to provide even more accurate devices and techniques formeasurement of beamlet properties in lithography systems, particularlyin lithography machines comprising a large number of charged-particlebeamlets that are designed to offer a high throughput.

BRIEF SUMMARY OF THE INVENTION

It is an object of the present invention to provide a more accuratesensor is suitable for use in a charged particle lithography system withenhanced resolution performance. For this purpose, the present inventionprovides a charged particle beamlet lithography system for transferringa pattern to a surface of a target comprising a sensor for determiningone or more characteristics of one or more charged particle beamlets,the sensor comprising a converter element for receiving chargedparticles and generating photons in response, the converter elementcomprising a surface for receiving one or more charged particlebeamlets, the surface being provided with one or more cells forevaluating one or more individual beamlets, each cell comprising apredetermined blocking pattern of one or more charged particle blockingstructures forming multiple knife edges at transitions between blockingand non-blocking regions along a predetermined beamlet scan trajectoryover the converter element surface, wherein the converter elementsurface is covered with a coating layer substantially permeable for thecharged particles and substantially impermeable for ambient light, andwherein the sensor further comprises an electrically conductive layerbetween the coating layer and the blocking structures.

The coating layer allows the sensor to respond in a more uniform mannerto the receipt of charged particles over a considerable area of theconverter element surface, for example over an area of about 3×3 mm².The coating layer removes local influences from ambient light, forexample background radiation or the like. As a result, a plurality ofbeamlets may be sensed simultaneously with high resolution. Suitablematerials for use in the coating layer include titanium (Ti) andaluminum (Al).

The blocking structures generally comprise a heavy metal like tungsten(W), and providing such structures on top of a substrate generallyincludes one or more etching steps. The material being used for theelectrically conductive layer preferably has a high selectivity for suchetching steps. A suitable material that may be included in the materialforming the electrically conductive layer is chromium (Cr). An advantageof using Cr is that it can be deposited in the same way as Ti, so thatit can be applied without substantial amount of additional effort ordifficulty.

In an embodiment the invention relates to a method of manufacturing aconverter element for selectively converting impinging charged particlesinto photons. The method comprises: providing a substrate comprising aconversion material for converting charged particles into photons;subsequently coating the substrate with a first layer comprising anelectrically conductive material, a second layer comprising an etch stopmaterial and a third layer comprising a third material; providing aresist layer on top of said third layer; patterning, and developing theresist layer so as to form a first predetermined pattern, and etchingthe developed resist layer until the third layer is exposed; coating theexposed third layer with a fourth layer comprising a further etch stopmaterial; lifting of the developed resist such that the third layer isexposed in accordance with a second predetermined pattern, the secondpredetermined pattern being an inversion of the first predeterminedpattern; etching the third layer in accordance with the secondpredetermined pattern until the second layer is exposed; etching thefourth layer as well as the second layer in accordance with the secondpredetermined pattern until the first layer is exposed.

BRIEF DESCRIPTION OF THE DRAWINGS

The features and advantages of the invention will be appreciated uponreference to the following drawings, in which:

FIG. 1 schematically shows the concept of a sensor using a substrateconverting charged particles into photons;

FIG. 2A schematically shows a cross-section of a converter elementprovided with a blocking structure;

FIG. 2B represents a graph showing the transmitted intensity as afunction of position for the blocking structure of FIG. 2A;

FIG. 2C schematically shows a problem related to line edge roughness;

FIGS. 3A-3H schematically show different stages of a method ofmanufacturing a converter element;

FIG. 4 shows parts of a charged particle beamlet lithography system.

DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The following is a description of certain embodiments of the invention,given by way of example only and with reference to the drawings.

FIG. 1 schematically shows the operation of a sensor for determining oneor more characteristics of particle beams, in particular one or morecharacteristics of charged particle beamlets. The sensor comprises aconverter element 1 and a photon receptor 5. The converter element isprovided with a pattern comprising charged particle blocking regions 8and charged particle transmissive regions 7, further referred to asnon-blocking regions. The converter element 1 is arranged for receivingcharged particles 2 and generating photons 3 in response. The photons 3may be directed towards the photon receptor 5 by means of an opticalsystem 11. The photon receptor 5 is communicatively coupled to acalculation unit, e.g. a computer 13 for determining one or morecharacteristics of the charged particles 2.

The converter element 1 may take the form of a fluorescent element, forexample a fluorescent screen, or a scintillating element, for example asubstrate of a doped yttrium aluminum garnet (YAG) material. Hereafter,embodiments of the invention will be described in with a YAG-screenbeing used as converter element 1, where the YAG-screen may be referredto as YAG 1.

The photon receptor 5 may include any suitable light sensitive detector,such as a plurality of diodes, charged coupled device (CCD) cameras orcomplementary metal-oxide semiconductor (CMOS) cameras. Hereafter, thephoton receptor 5 may be referred to as camera 5.

Additionally, although embodiments of the invention may be used for anytype of (charged) particles or light beams 2, hereafter, embodiments ofthe invention will be discussed with reference to electrons.

In electron beamlet devices where the beamlet size is in the nanometerrange, for example electron microscopes, electron beam lithographyapparatus, and electron beam pattern generators, direct observation ofphotons created by conversion by the converter element 1 is insufficientto enable determination of characteristics such as position of anelectron beamlet as the resolution is limited by the wavelength of theconverter element 1.

To improve accuracy, an electron beamlet may be scanned across anelectron blocking structure provided with sharp edges, further referredto as knife edges. An example of a sensor using a converter elementprovided with a knife edge is described in patent application US2007/057204.

FIG. 2A schematically shows a cross-section of a YAG 1 comprising anelectron beamlet receiving surface provided with an electron blockingstructure. The electron blocking structure comprises electron blockingregions provided with a layer 18 capable of blocking electrons. Theblocking layer 18 may be a metal layer. A suitable metal for blockingelectrons is tungsten. In between the blocking regions are non-blockingregions. An electron beam 22 impinging onto a non-blocking region of theelectron blocking structure actually impinges onto the surface of theYAG 1 or a coating on the surface of the YAG.

Within the portions for blocking electrons, besides the blocking layer18 an additional layer 21 is present. The additional layer 21 serves thepurpose of increasing the uniformity of the blocking layer 18. Theadditional layer 21 may be a metal layer. An example of a particularlysuitable material for use in the additional layer 21 is chromium.

The YAG 1 may be coated with a coating layer 20. The coating layer 20may be a metal layer for blocking background radiation. The coatinglayer 20 is substantially permeable to charged particles on the onehand, while being substantially impermeable for ambient light on theother hand. For this reason, the thickness of the coating layer 20 issufficient to establish both functions. Suitable materials for thecoating layer 20 include aluminum and titanium.

As mentioned earlier, in order to determine one or more characteristicsof an electron beam 22, the electron beam 22 may be scanned over ablocking structure provided on the YAG 1 (in FIG. 2A in a directiondenoted as X-direction). In response, photons generated within the YAG 1may be detected by a camera. An exemplary result of such scanning anddetection action is schematically depicted in FIG. 2B.

FIG. 2B shows a graph representing intensity of light emitted by aconverter element 1 as a function of x-position of an electron beam 22over the surface of the converter element 1. A maximum response isobserved when electron beam 22 is entirely positioned in a non-blockingregion, and minimal light is generated if the electron beam 22 ispositioned entirely on top of a blocking region. The crossing of a knifeedge results in a steep change of light intensity.

In some embodiments, in order to provide a robust processing ofmeasurement results, intensity levels exceeding a higher threshold valueT_(h), are provided as high level signal values to a processor.Similarly, detected intensity levels below a lower threshold value T_(l)may be provided as low level signal values. The use of threshold valuesT_(h), T_(l) may enable the use of digital processing.

Upon scanning an electron beam in a predetermined direction, theelectron beamlet may encounter two types of situations while crossing aknife edge. In a first situation, the beamlet experiences a transitionfrom a blocking region to a non-blocking region. In a second situation,the beamlet experiences a transition from a non-blocking region to ablocking region.

Knife edges being encountered during a transition that corresponds tothe first situation may be referred to as knife edges of a first type.Similarly, knife edges being encountered during a transition thatcorresponds to the second situation may be referred to as knife edges ofa second type. The type of knife edge is thus dependent on the scanningdirection of the beamlet to be measured. If reference is made to “knifeedges of similar type”, this means that all the knife edges involvedeither relate to knife edges of the first type or relate to knife edgesof the second type.

Knowledge of the knife edge pattern provided on the electron-receivingsurface of the converter element surface allows for the determination ofone or more characteristics of a beamlet. Characteristics that can bemeasured by using a sensor as described with reference to FIG. 1, and aknife edge pattern as described with reference to FIG. 2A, includebeamlet position and beamlet spot size, where the spot size relates tothe size of the electron beamlet on the surface of the converter element1.

For example, beamlet position can be measured by scanning the beamletacross the surface of the converter element in the x-direction andmeasuring the position at which the intensity of light emitted by aconverter element changes from a maximum to a minimum value or from aminimum to a maximum value, as shown in FIG. 2B. For example, when theintensity changes from maximum to minimum value, this indicates that thebeamlet is scanned over a knife edge transitioning from a non-blockingregion to a blocking region in the x direction. However, there may beuncertainty as to which knife edge the beamlet is located at.

The size of the beamlet can be determined, for example, by measuring thedistance between the point at which the intensity begins to decreasefrom a maximum value and the point at which the intensity reaches aminimum value as the beamlet is scanned across a knife edge. Thisindicates the distance over which the beamlet is partly blocked andpartly un-blocked. Similarly, the beamlet size can be determined bymeasuring the time between sensing a maximum intensity and sensing aminimum intensity as the beamlet is scanned across a knife edge, andmultiplying by the scanning speed of the beamlet. These measurements canalso be performed on the opposite knife edge, the beamlet moving fromminimum to maximum intensity.

Note that the measurement shown in FIG. 2B, and the discussion ofbeamlet position and beamlet size measurements relates to a beamlethaving dimensions that are smaller than the widths of the blocking andnon-blocking regions involved. These dimensions and widths arepreferably taken along a direction parallel to the scan direction beingused.

In many applications, a single knife edge is not suitable to obtainbeamlet characteristics with sufficient accuracy. In particularso-called line edge roughness (LER) of a knife edge may limit theaccuracy of beamlet measurements. FIG. 2D 2C schematically illustrates aproblem related to LER. In FIG. 2D 2C, a sensor is arranged to detectthe intensity of a beamlet being moved across a knife edge 31 separatingan electron blocking region 33 and an electron non-blocking region 34.The knife edge 31 is designed to have the orientation and shape asdenoted by the dotted line 32.

If the x-position of the beamlet is detected under the assumption thatit follows a trajectory A across the knife edge 31 from the blockingregion 33 towards the non-blocking region 34, while in reality thetrajectory B is followed, the beamlet position in the scanning directionshould be the same for both trajectories. After all, both trajectoriescross the dotted line 32 at the same x-position. However, as can bereadily seen in FIG. 2D 2C, due to the line edge roughness of the knifeedge 31, the measured x-position of the beamlet for trajectory A will bedifferent than the measured x-position for trajectory B. In thisexample, determining the x-position based on the crossing of singleknife edge 31 provides an inaccurate result.

FIGS. 3A-3H schematically show different stages of a method ofmanufacturing a converter element, for example a converter element asdiscussed with reference to FIG. 2A. The converter element is arrangedfor selectively converting impinging charged particles into photons.

First, as shown in FIG. 3A, a substrate 101 is provided for supportingfurther layers of the sensor. Throughout this description thecombination of the substrate 101 and the structures applied thereon isreferred to as converter element. The substrate 101 comprises aconversion material for converting charged particles into photons. Suchconversion material may be a scintillating material. In particular forapplications where electrons are used as charged particles, a suitablescintillating material may be a material comprising an yttrium aluminumgarnet (YAG).

Subsequently, as shown in FIG. 3B, a surface side of the substrate 101arranged for reception of charged particles is coated with one or morelayers, typically being metal layers. The layers comprise a first layer103 comprising an electrically conductive material. The first layer 103is substantially impermeable for ambient light, that is the layer isarranged for blocking background radiation. Such background lightblocking layer enhances quality of the sensor by preventing backgroundlight from interfering with the light generated by the converterelement. The first layer 103 is further substantially permeable forcharged particle beamlets. For this reason, the first layer 103generally has a thickness within the range of about 30 to about 80 nm.Suitable materials for the first metal include titanium and aluminum, Tibeing preferred as less prone to oxidizing over time and hence moreconducive to maintaining lasting surface uniformity of said layer.

Additionally, the layers comprise a second layer 104 comprising a secondmaterial. The second material is an etch stop material that serves thepurpose of stopping an etching process, preferably for both wet etchingand dry etching processes. The use of the second layer can result inimproved etching quality, in particular if the material has a high etchsensitivity. The second layer may be particularly useful for therealization of sharper edges. A suitable material for the second metalis chrome chromium.

The layers further comprise a third layer 105 comprising a thirdmaterial. The third material serves the purpose of blocking chargedparticle beamlets. A suitable material for the third material is amaterial that blocks charged particles as well as ambient light whilehaving a layer of limited thickness. A suitable material is tungsten, inwhich case a suitable thickness would lie within the range of 50 to 500nm. Such thickness is thick enough to sufficiently block incomingcharged particles. On the other hand, such thickness has a negligibleinfluence on effects like defocus and edge roughness.

On top of the number of layers 103, 104, 105, a resist layer 107 isprovided. As schematically shown in FIG. 3C, the resist layer 107 may bea single resist layer or, alternatively, a double resist layercomprising an upper layer 107a, and a lower layer 107b respectively.Further reference will be made to a single resist layer 107.

The resist layer 107 is then patterned in correspondence to a firstpredetermined pattern. After patterning, the resist layer 107 undergoesdeveloping and etching steps in a fashion generally known in the art.The etching is performed until the third layer 105 is exposed. Anexemplary end result of patterning, developing and etching the resistlayer 107 is schematically shown in FIG. 3D.

After etching, the exposed third layer 105 is coated with a fourth layer109, for example by means of evaporation, as is schematically shown inFIG. 3E. Generally, the fourth layer 109 is a metal layer. The fourthlayer 109 may serve as an etch stopping layer and may improve etchingquality. The layer 109 may comprise the same material as used in thesecond layer 104, for example chrome chromium.

After deposition of the fourth layer 109, the developed resist isremoved by lift off such that the third layer 105 is exposed inaccordance with a second predetermined pattern, as schematically shownin FIG. 3F. The second predetermined pattern is an inversion of thefirst predetermined pattern.

Subsequently, the exposed third layer 105 is etched in accordance withthe second predetermined pattern until the second layer 104 is exposed.A schematic drawing of the converter element at this stage of themanufacturing process is shown in FIG. 3G.

Finally, as schematically shown in FIG. 3H, the fourth layer 109 as wellas the second layer 104 in accordance with the second predeterminedpattern are removed, the latter one until the first layer 103 isexposed. Removal may be performed by techniques known in the art, forexample etching.

The resulting converter element is similar to the converter elementdescribed with reference to FIG. 2A. When the method of FIGS. 3A-3Hwould be used to manufacture the converter element of FIG. 2A, substrate1 and layers 18, 20, and 21 in FIG. 2A correspond to substrate 101 andlayers 105, 103, and 104 respectively.

The invention has been described by reference to certain embodimentsdiscussed above. It will be recognized that these embodiments aresusceptible to various modifications and alternative forms well known tothose of skill in the art. Further modifications in addition to thosedescribed above may be made to the structures and techniques describedherein without departing from the spirit and scope of the invention.Accordingly, although specific embodiments have been described, theseare examples only and are not limiting upon the scope of the invention,which is defined in the accompanying claims.

The invention claimed is:
 1. Charged particle beamlet lithography systemfor transferring a pattern to a surface of a target comprising a sensorfor determining one or more characteristics of one or more chargedparticle beamlets, the sensor comprising a converter element forreceiving charged particles and generating photons in response, theconverter element comprising a surface for receiving one or more chargedparticle beamlets, the surface being provided with one or more cells forevaluating one or more individual beamlets, each cell comprising apredetermined blocking pattern of one or more charged particle blockingstructures forming multiple knife edges at transitions between blockingand non-blocking regions along a predetermined beamlet scan trajectoryover the converter element surface, the surface being provided with apattern comprising charged particle blocking regions and chargedparticle non-blocking regions, the charged particle blocking regionscomprising one or more charged particle blocking structures formingmultiple knife edges at transitions between blocking and non-blockingregions along a predetermined beamlet scan trajectory over the converterelement surface, wherein the converter element surface is covered with acoating layer substantially permeable for said charged particles andsubstantially impermeable for ambient light, and an electricallyconductive layer is located between the coating layer converter elementsurface and the blocking structures, the electrically conductive layerbeing located underneath the blocking structures, the electricallyconductive layer being located only within the blocking regions. 2.System according to claim 1, wherein the sensor is adapted fordetermining one or more characteristics of a plurality of chargedparticle beamlets for each of the beamlets in parallel by simultaneouslygenerating a signal in response to receiving each of the plurality ofcharged particles beamlets.
 3. System according to claim 1, wherein theconductive layer is substantially similar in shape and size as thedimensions of the blocking structures in a plane substantially parallelto the converter element surface.
 4. System according to claim 1,wherein the conductive layer comprises chromium.
 5. System according toclaim 1, wherein the blocking structures comprise tungsten.
 6. Systemaccording to claim 1, wherein the converter element comprises ascintillating material.
 7. System according to claim 6, wherein thescintillating material comprises an yttrium aluminum garnet.
 8. Systemaccording to claim 1, wherein the coating layer comprises titanium. 9.System according to claim 1, wherein the charged particle beamlets areelectron beamlets.
 10. System according to claim 1, wherein the sensorfurther comprises: a photon receptor for receiving photons generated bysaid converter element; and a control unit for receiving signals fromthe photon receptor and for determining one or more characteristics ofone or more beamlets based on said signals.
 11. System according toclaim 1, further comprising: a beamlet generator for generating aplurality of charged particle beamlets; a modulation system formodulating the charged particle beamlets in accordance with a pattern tobe transferred; an electron-optical system for focusing the modulatedbeamlets onto the surface of the target; a deflecting system fordeflecting the focused beamlets over the surface of either the target orthe sensor.
 12. Sensor for generating a signal in response to exposurethereof by a charged particle beam, the sensor comprising a converterelement for receiving charged particles and generating photons inresponse, the converter element comprising a surface for receiving oneor more charged particle beamlets, the surface being provided with oneor more cells for evaluating one or more individual beamlets, each cellcomprising a predetermined blocking pattern of one or more chargedparticle blocking structures forming multiple knife edges at transitionsbetween blocking and non-blocking regions along a predetermined beamletscan trajectory over the converter element surface, the surface beingprovided with a pattern comprising charged particle blocking regions andcharged particle non-blocking regions, the charged particle blockingregions comprising one or more charged particle blocking structuresforming multiple knife edges at transitions between blocking andnon-blocking regions along a predetermined beamlet scan trajectory overthe converter element surface, wherein said converter surface is coveredwith a coating layer substantially permeable for said charged particlesand substantially impermeable for ambient light, and an electricallyconductive layer is located between the coating layer converter elementsurface and the blocking structures, the electrically conductive layerbeing located underneath the blocking structures, the electricallyconductive layer being located only within the blocking regions, andwherein the sensor further comprises a photon receptor associated withthe converter element for generating a signal on the basis of photonsgenerated by the converter element.
 13. Sensor according to claim 12,wherein the photon receptor is arranged for forming receptioninformation based on photons generated by the converter element, thesensor further comprising a control unit for receiving the receptioninformation from the photon receptor and determining a characteristic ofthe plurality of charged particle beams based on the receptioninformation.
 14. Converter element for receiving charged particles andgenerating photons in response for use in a sensor for sensing acharacteristic of a plurality of charged particles beamlets, theconverter element comprising a surface for receiving one or more chargedparticle beamlets, the surface being provided with one or more cells forevaluating one or more individual beamlets, each cell comprising apredetermined blocking pattern of one or more charged particle blockingstructures forming multiple knife edges at transitions between blockingand non-blocking regions along a predetermined beamlet scan trajectoryover the converter element surface, the surface being provided with apattern comprising charged particle blocking regions and chargedparticle non-blocking regions, the charged particle blocking regionscomprising one or more charged particle blocking structures formingmultiple knife edges at transitions between blocking and non-blockingregions along a predetermined beamlet scan trajectory over the converterelement surface, wherein the converter element surface is covered with acoating layer substantially permeable for charged particles andsubstantially impermeable for ambient light, and an electricallyconductive layer is located between the coating layer converter elementsurface and the blocking structures, the electrically conductive layerbeing located underneath the blocking structures, the electricallyconductive layer being located only within the blocking regions. 15.Method of manufacturing a converter element arranged for selectivelyconverting impinging charged particles into photons, the methodcomprising: providing a substrate comprising a conversion material forconverting charged particles into photons; subsequently coating thesubstrate with a first layer comprising an electrically conductivematerial, a second layer comprising an etch stop material and a thirdlayer comprising a third material; providing a resist layer on top ofsaid third layer; patterning, and developing the resist layer so as toform a first predetermined pattern, and etching the developed resistlayer until the third layer is exposed; coating the exposed third layerwith a fourth layer comprising a further etch stop material; lifting ofthe developed resist such that the third layer is exposed in accordancewith a second predetermined pattern, the second predetermined patternbeing an inversion of the first predetermined pattern; etching the thirdlayer in accordance with the second predetermined pattern until thesecond layer is exposed; etching the fourth layer as well as the secondlayer in accordance with the second predetermined pattern until thefirst layer is exposed.
 16. The method according to claim 15, whereinsaid first layer is substantially impermeable for ambient light andsubstantially permeable for charged particle beamlets.
 17. The methodaccording to claim 15, wherein the etch stop material of the secondlayer and the further etch stop material of the fourth layer are thesame.
 18. The method according to claim 15, wherein at least one of theetch stop material and the further etch stop material comprises chromechromium.
 19. The method according to claim 15, wherein the electricallyconductive material of the first layer comprises at least one oftitanium and aluminum.
 20. The method according to claim 15, wherein thethird layer material has a high selectivity to both wet and dry etching.21. The method according to claim 15, wherein the third materialcomprises tungsten.
 22. The method according to claim 15, wherein theconversion material of the substrate comprises a scintillating material.23. The method according to claim 22, wherein the scintillating materialcomprises an yttrium aluminum garnet.
 24. System according to claim 1,wherein the converter element surface is covered with a coating layersubstantially permeable for said charged particles and substantiallyimpermeable for ambient light, and the electrically conductive layer islocated between the coating layer and the blocking structures. 25.System according to claim 24, wherein the coating layer comprisestitanium.
 26. Sensor according to claim 12, wherein the electricallyconductive layer comprises chromium.
 27. Sensor according to claim 12,wherein the blocking structures comprise tungsten.
 28. Sensor accordingto claim 12, wherein the converter element comprises a scintillatingmaterial.
 29. Sensor according to claim 28, wherein the scintillatingmaterial comprises an yttrium aluminum garnet.
 30. Sensor according toclaim 12, wherein the converter element surface is covered with acoating layer substantially permeable for said charged particles andsubstantially impermeable for ambient light, and the electricallyconductive layer is located between the coating layer and the blockingstructures.
 31. Sensor according to claim 30, wherein the coating layercomprises titanium.
 32. Converter element according to claim 14, whereinthe converter element comprises a scintillating material.
 33. Converterelement according to claim 14, wherein the electrically conductive layercomprises chromium.
 34. Converter element according to claim 14, whereinsaid converter element surface is covered with a coating layersubstantially permeable for said charged particles and substantiallyimpermeable for ambient light, and the electrically conductive layer islocated between the coating layer and the blocking structures.